DocumentCode
2399046
Title
BiCMOS for High Performance Analog and Digital Circuits
Author
Pfleiderer, H.J. ; Wieder, A.W. ; Hart, K.
Author_Institution
Corp. R&D, Siemens AG, Munich, Germany
fYear
1989
fDate
20-22 Sept. 1989
Firstpage
153
Lastpage
167
Abstract
This report describes BiCMOS techniques for high-speed/ high-density circuits for digital as well as analog functions. First the features of MOS and bipolar devices are compared. The different aspects of designing a BiCMOS process are described next. Finally the advantages of the BiCMOS technology for systems applications are demonstrated.
Keywords
BiCMOS analogue integrated circuits; BiCMOS digital integrated circuits; MOS integrated circuits; bipolar integrated circuits; integrated circuit design; BICMOS; MOS device; bipolar device; digital circuit; high performance analog circuit; BiCMOS integrated circuits; CMOS logic circuits; CMOS process; CMOS technology; Costs; Delay; Digital circuits; Parasitic capacitance; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1989. ESSCIRC '89. Proceedings of the 15th European
Conference_Location
Vienna
Print_ISBN
3-85403-101-7
Type
conf
DOI
10.1109/ESSCIRC.1989.5468121
Filename
5468121
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