Title :
Silicon field emitter arrays for cathodoluminescent flat panel displays
Author :
Sune, C.T. ; Jones, G.W. ; Gray, H.F.
Author_Institution :
MCNC Center for Microelectron., Research Triangle Park, NC, USA
Abstract :
Cathodoluminescent flat panel displays can be made with field emitter arrays (FEAs). Using a novel orientation-dependent etching (ODE) and linear thermal oxidation process, the authors have fabricated uniform and reproducible FEAs which yield up to 10 mu A/tip with less than 200-V DC bias voltages. Modulation voltages are in the 10-V region. These FEAs can be the basis for a simple and inexpensive cathodoluminescent flat panel display or TV.<>
Keywords :
cathodoluminescence; elemental semiconductors; etching; flat panel displays; luminescent devices; oxidation; semiconductor technology; silicon; 10 V; 200 V; DC bias; Si; cathodoluminescent flat panel displays; field emitter arrays; linear thermal oxidation; modulation voltages; orientation-dependent etching; Etching; Fabrication; Field emitter arrays; Flat panel displays; Liquid crystal displays; Microelectronics; Oxidation; Plasma displays; Silicon; Voltage;
Conference_Titel :
Display Research Conference, 1991., Conference Record of the 1991 International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0213-3
DOI :
10.1109/DISPL.1991.167453
