• DocumentCode
    2399395
  • Title

    Boundary element computation of line parameters of on-chip interconnects on lossy silicon substrate

  • Author

    Li, D. ; Di Rienzo, L.

  • Author_Institution
    Dipartimento di Elettrotecnica, Politecnico di Milano, Piazza L. da Vinci, 32 - 20133, Italy
  • fYear
    2011
  • fDate
    11-14 April 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    A BEM formulation is applied to the extraction of series parameters of interconnects on lossy silicon substrate. The numerical formulation can take into account both a semi-infinite homogeneous conductive substrate and a homogeneous conductive substrate of finite thickness with backside metallization.
  • Keywords
    Boundary Element Method; interconnects; per-unit-length parameters; silicon substrate; transmission lines;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Computation in Electromagnetics (CEM 2011), IET 8th International Conference on
  • Conference_Location
    Wroclaw
  • Type

    conf

  • DOI
    10.1049/cp.2011.0019
  • Filename
    6085440
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2399395