Title :
Low turn-off switching energy 1200 V IGBT module
Author :
Yamada, Junji ; Yu, Yoshiharu ; Ishimura, Y. ; Donlon, John F. ; Motto, Eric R.
Author_Institution :
Power Device Div., Mitsubishi Electr. Corp., Fukuoka, Japan
Abstract :
A new 5th generation IGBT module with low turn-off energy has been developed. The module utilizes IGBT chips optimized for high frequency industrial power supplies in applications such as X-ray, MRI (magnetic resonance imaging), and induction heating. This technology is designed to provide a simplified cost effective alternative to parallel discrete MOSFETs in these applications.
Keywords :
X-ray production; induction heating; insulated gate bipolar transistors; magnetic resonance imaging; modules; power semiconductor switches; power supplies to apparatus; 1200 V; 300 A; IGBT chips; IGBT module; MRI; X-ray applications; high frequency industrial power supplies; induction heating; low turn-off energy; low turn-off switching energy; magnetic resonance imaging; module package development; vertical structure light punch-through technology; Frequency; Inductance; Induction generators; Insulated gate bipolar transistors; MOSFETs; Magnetic resonance imaging; Packaging; Power generation; Switching loss; Voltage;
Conference_Titel :
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the
Conference_Location :
Pittsburgh, PA, USA
Print_ISBN :
0-7803-7420-7
DOI :
10.1109/IAS.2002.1043831
