Title :
Low-leakage current polysilicon TFTs for LCD pixel addressing
Author :
Eno, Y. ; Masumo, K. ; Kunigita, M. ; Akatsuka, M. ; Yuki, M.
Author_Institution :
Asahi Glass Co. Ltd., Yokohama, Japan
Abstract :
The leakage current characteristics of low-temperature polysilicon TFTs (thin-film transistors) below 450 degrees C have been investigated. It was confirmed that the laser-induced crystallized polysilicon with temperature below 450 degrees C has good physical properties and device characteristics in TFT, equal to those of polysilicon with a process temperature of around 600 degrees C. Reduction of leakage current at higher signal voltage could be achieved by the optimization of the geometrical structure with the laser-induced crystallized polysilicon TFT. The low leakage current characteristics at the higher signal voltage may enlarge the applicable field in the higher-performance display. For example, these improved characteristics make it possible to apply higher voltage for addressing pixels of normally white TN and LC (liquid crystal) polymer composite mode.<>
Keywords :
elemental semiconductors; insulated gate field effect transistors; ion implantation; leakage currents; liquid crystal displays; plasma CVD coatings; semiconductor technology; silicon; thin film transistors; 450 degC; 600 degC; LCD pixel addressing; geometrical structure; ion implantation; laser-induced crystallized polysilicon TFT; leakage current characteristics; optimization; polymer composite mode; polysilicon; twisted nematic LCD; Crystallization; Laser modes; Laser theory; Leakage current; Liquid crystal devices; Liquid crystal displays; Liquid crystal polymers; Temperature; Thin film transistors; Voltage;
Conference_Titel :
Display Research Conference, 1991., Conference Record of the 1991 International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0213-3
DOI :
10.1109/DISPL.1991.167470
