Effect of processing temperature on polysilicon thin film transistors for active matrix LCDs

Author

Mitra, U. ; Khan, B. ; Venkatesan, M. ; Stupp, E.H.

Author_Institution

North American Philips Corp., Briarcliff Manor, NY, USA

fYear

1991

fDate

15-17 Oct. 1991

Firstpage

207

Lastpage

210

Abstract

The effect of processing conditions on polysilicon TFT (thin-film transistor) performance is explained. By careful selection of process techniques excellent devices are obtained, independent of processing temperature. It is possible to fabricate polysilicon TFTs at low temperature with performance comparable to that of high-temperature TFTs by replacing the high-temperature steps with low-temperature steps which have the same effect on the material and device structure. These TFTs are used in full-resolution LCDs (liquid crystal displays) for projection television.<>

Keywords

elemental semiconductors; insulated gate field effect transistors; liquid crystal displays; semiconductor technology; silicon; television equipment; thin film transistors; active matrix LCDs; liquid crystal displays; polysilicon thin film transistors; processing temperature; projection television; semiconductor technology; Active matrix liquid crystal displays; Dielectric devices; Fabrication; Implants; Oxidation; Plasma devices; Plasma properties; Plasma temperature; Silicon; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Display Research Conference, 1991., Conference Record of the 1991 International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0213-3

Type

conf

DOI

10.1109/DISPL.1991.167471

Filename

167471