High mobility cadmium selenide transistors

Author

Lee, M.J. ; Wright, S.W. ; Judge, C.P. ; Cheung, P.Y.

Author_Institution

Dept. of Electr. Eng., Imperial Coll., London, UK

fYear

1991

fDate

15-17 Oct. 1991

Firstpage

211

Lastpage

214

Abstract

Field-effect mobilities in excess of 450 cm/sup 2/ V/sup -1/ s/sup -1/ are reported in CdSe TFTs (thin-film transistors) using a maximum process temperature of 400 degrees C. Devices with channel lengths, ranging from 5 mu m to 30 mu m with aspect ratios of 0.5 to 40 were prepared. The transfer characteristics are very steep with a gate voltage swing of approximately 15 V, giving a switching ratio of >10/sup 9/ with an off current of <10/sup -14/ A/square which is relatively insensitive to the drain voltage. Comparisons between circuit simulations using HSPICE and experimental results are shown.<>

Keywords

II-VI semiconductors; cadmium compounds; characteristics measurement; electric variables measurement; high electron mobility transistors; thin film transistors; 15 V; 400 degC; 5 to 30 micron; CdSe; HSPICE; channel lengths; circuit simulations; drain voltage; switching ratio; thin-film transistors; transfer characteristics; Cadmium compounds; Circuit testing; Dielectric substrates; Displays; Driver circuits; Pollution measurement; Silicon compounds; Temperature; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Display Research Conference, 1991., Conference Record of the 1991 International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0213-3

Type

conf

DOI

10.1109/DISPL.1991.167472

Filename

167472