Title :
Fine gate TFT circuits fabricated with a new printing technology
Author :
Asada, H. ; Hayama, H. ; Nagae, Y. ; Okazaki, S. ; Akimoto, Y. ; Saito, T.
Author_Institution :
GTC Corp., Tokyo, Japan
Abstract :
Fine-gate polysilicon thin-film transistors (TFTs) and TFT circuits for large-area electronics have been successfully fabricated with a new printing technology. Electric characteristics for an experimental 3- mu m-gate n-channel TFT are comparable to those for conventional TFTs. A 5- mu m design-rule NMOS shift register and 8*8 liquid crystal display (LCD) operations have also been achieved. The printing technology can delineate patterns fine enough to produce large-area high-resolution TFT-LCDs without using an optical mask aligner.<>
Keywords :
elemental semiconductors; insulated gate field effect transistors; integrated circuit technology; liquid crystal displays; photolithography; semiconductor technology; shift registers; silicon; thin film transistors; 3 micron; 5 micron; NMOS shift register; TFT circuits; large area LCD; large-area electronics; liquid crystal display; patterns; polysilicon thin-film transistors; printing technology; semiconductors technology; Glass; Integrated circuit technology; Large scale integration; Liquid crystal displays; Optical device fabrication; Optical films; Printing; Resists; Shift registers; Thin film transistors;
Conference_Titel :
Display Research Conference, 1991., Conference Record of the 1991 International
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-0213-3
DOI :
10.1109/DISPL.1991.167476
