Fine gate TFT circuits fabricated with a new printing technology

Author

Asada, H. ; Hayama, H. ; Nagae, Y. ; Okazaki, S. ; Akimoto, Y. ; Saito, T.

Author_Institution

GTC Corp., Tokyo, Japan

fYear

1991

fDate

15-17 Oct. 1991

Firstpage

227

Lastpage

230

Abstract

Fine-gate polysilicon thin-film transistors (TFTs) and TFT circuits for large-area electronics have been successfully fabricated with a new printing technology. Electric characteristics for an experimental 3- mu m-gate n-channel TFT are comparable to those for conventional TFTs. A 5- mu m design-rule NMOS shift register and 8*8 liquid crystal display (LCD) operations have also been achieved. The printing technology can delineate patterns fine enough to produce large-area high-resolution TFT-LCDs without using an optical mask aligner.<>

Keywords

elemental semiconductors; insulated gate field effect transistors; integrated circuit technology; liquid crystal displays; photolithography; semiconductor technology; shift registers; silicon; thin film transistors; 3 micron; 5 micron; NMOS shift register; TFT circuits; large area LCD; large-area electronics; liquid crystal display; patterns; polysilicon thin-film transistors; printing technology; semiconductors technology; Glass; Integrated circuit technology; Large scale integration; Liquid crystal displays; Optical device fabrication; Optical films; Printing; Resists; Shift registers; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Display Research Conference, 1991., Conference Record of the 1991 International

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-0213-3

Type

conf

DOI

10.1109/DISPL.1991.167476

Filename

167476