DocumentCode :
239973
Title :
Comparative review of the TiO2 and the spintronic memristor devices
Author :
Elshamy, Mohamed ; Mostafa, Hassan ; Sameh Said, M.
Author_Institution :
Electron. & Commun. Eng. Dept., Cairo Univ., Cairo, Egypt
fYear :
2014
fDate :
4-7 May 2014
Firstpage :
1
Lastpage :
6
Abstract :
Memristor, has attracted increased attentions since the first real device was discovered by HP Labs in 2008. Its distinctive characteristic to store the historic state of the voltage/current through it creates great potentials in circuit design. Thus, many physical realization of the device have been introduced. In this work, a review of two of the most challenging physical realizations of the memristor is performed in light of what was predicted by Chua in 1971.
Keywords :
magnetoelectronics; memristors; network synthesis; titanium compounds; TIP Labs; TiO2; circuit design; historic state; physical realizations; spintronic memristor devices; Conductivity; Magnetization; Magnetoelectronics; Memristors; Resistance; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical and Computer Engineering (CCECE), 2014 IEEE 27th Canadian Conference on
Conference_Location :
Toronto, ON
ISSN :
0840-7789
Print_ISBN :
978-1-4799-3099-9
Type :
conf
DOI :
10.1109/CCECE.2014.6900966
Filename :
6900966
Link To Document :
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