DocumentCode
2399970
Title
A resonant converter suitable for 650 V DC bus operation
Author
Bhat, Ashoka K S
Author_Institution
Dept. of Electr. & Comput. Eng., Victoria Univ., BC, Canada
fYear
1989
fDate
13-17 Mar 1989
Firstpage
231
Lastpage
239
Abstract
A high-frequency resonant converter configuration suitable for operation on a 650 V (nominal value) DC bus is described. Selection of the high-frequency switch and an appropriate resonant converter configuration are discussed. A series-parallel resonant converter using insulated-gate bipolar transistor-gated bipolar/MOSFET (BiMOS) cascode switches and operating above resonance is chosen for the application. A simplified analysis, a simple design procedure, and detailed experimental results are presented
Keywords
bipolar transistors; field effect transistors; power convertors; switches; 650 V; DC bus; HF resonant convertor; insulated-gate bipolar transistor-gated/MOSFET cascode switches; Analog-digital conversion; Capacitors; Filters; Insulated gate bipolar transistors; Low voltage; MOSFET circuits; Pulse width modulation converters; Resonance; Switches; Switching converters;
fLanguage
English
Publisher
ieee
Conference_Titel
Applied Power Electronics Conference and Exposition, 1989. APEC' 89. Conference Proceedings 1989., Fourth Annual IEEE
Conference_Location
Baltimore, MD
Type
conf
DOI
10.1109/APEC.1989.36975
Filename
36975
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