Title :
20 Gbit/s Integrated Laser Diode Voltage Driver Using 0.3 μm Gate Length Quantum Well Transistors
Author :
Wang, Z.-G. ; Berroth, M. ; Nowotny, U. ; Hofmann, P. ; Hulsmann, A. ; Kaufel, G. ; Köhler, K. ; Raynor, B. ; Schneider, J.
Author_Institution :
Fraunhofer-Inst. fur Angewandte Festkorperphys., Freiburg, Germany
Abstract :
An integrated laser diode voltage driver (LDVD) making use of enhancement/depletion AlGaAs/GaAs quantum well high electron mobility transistors (QW-HEMTs) with a gate length of 0.3 μm has been developed. Its large signal bandwidth was 12 GHz. Eye diagrams of the output signal at bit rates up to 8 Gbit/s showed an opening like that of the input signal. Increasing the bit rate of the input signal by means of a multiplexer, we can prove that the LDVD can operate at 20 Gbit/s. The maximum output current is over 90 mA; the maximum modulation voltage of 800 mV corresponds to 40 mA modulation current for a laser diode with 20 Ω dynamic resistance. The power consumption is less than 500 mW.
Keywords :
III-V semiconductors; driver circuits; gallium arsenide; high electron mobility transistors; multiplexing equipment; power consumption; quantum well devices; semiconductor lasers; semiconductor quantum wells; GaAs; LDVD; QW-HEMT; bit rate 20 Gbit/s; bit rate 8 Gbit/s; current 40 mA; frequency 12 GHz; gate length quantum well high electron mobility transistors; integrated laser diode voltage driver; multiplexer; power consumption; resistance 20 ohm; signal bandwidth; size 0.3 mum; Bandwidth; Bit rate; Diode lasers; Driver circuits; Energy consumption; Gallium arsenide; HEMTs; MODFETs; Multiplexing; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1992. ESSCIRC '92. Eighteenth European
Conference_Location :
Copenhagen
Print_ISBN :
87-984232-0-7
DOI :
10.1109/ESSCIRC.1992.5468178
