Fast frequency tuning characteristics of a FM laser based on the integrated MQW DFB laser/EA modulator device

Author

Cai, J. ; Chen, Z. ; Ji, X. ; Sun, Y. ; Lin, J. ; Zhao, X. ; Yu, X. ; Zhang, Juyong ; Yan, J. ; Raj, M. ; Choa, F.S.

Author_Institution

Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

638

Abstract

Using the selective-area-growth (SAG) technique we have recently successfully fabricated FM lasers based on the integrated DFB/EA modulator devices. The InGaAs/InGaAsP MQW device with a separate confined heterostructure (SCH) and a planar semiinsulating buried-heterostructure (BH), was grown in one primary growth by low-pressure MOCVD. The lasing wavelength is around 1.551 μm.

Keywords

III-V semiconductors; MOCVD; distributed feedback lasers; electroabsorption; frequency modulation; gallium arsenide; indium compounds; infrared spectra; integrated optics; laser tuning; optical communication equipment; optical fabrication; optical modulation; quantum well lasers; semiconductor lasers; semiconductor quantum wells; 1.551 micron; EA modulator device; FM laser fabrication; InGaAs-InGaAsP; InGaAs-InGaAsP MQW device; MOCVD; MQW DFB laser; electroabsorption; fast frequency tuning characteristics; frequency modulation; integrated optical device; lasing wavelength; planar semiinsulating buried-heterostructure; selective-area-growth technique; separate confined heterostructure; Fiber lasers; Frequency modulation; Gratings; Laser feedback; Laser theory; Laser tuning; Masers; Quantum well devices; Semiconductor lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1252962

Filename

1252962