DocumentCode
2400243
Title
GaAs Power HBT: COOL Device With HOT Performance
Author
Ali, Fazal
fYear
1995
fDate
28-28 April 1995
Abstract
AlGaAs/GaAs Heterojunction Bipolar Transistors (HBTs) designed for microwave power applicatims have shown marked improvements in output power and power-added efficiency (PAE) during recent years. This paper provides a synopsis of the design considerations for high efficiency, GaAs HBT unit-cell and power amplifiers. Performance results of several high efficiency HBT power MMIC amplifiers designed for narrowband and broadband applications are also be presented.
Keywords
Breakdown voltage; Broadband amplifiers; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Microwave devices; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Sarnoff Symposium, 1995., IEEE Princeton Section
Conference_Location
Princeton, NJ, USA
Type
conf
DOI
10.1109/SARNOF.1995.636670
Filename
636670
Link To Document