Title :
PHEMTs - Emerging High Performance Devices
Abstract :
PHEMTs, grown on GaAs and InP, due to their extremely high mobility, offer significant performance advantages from UHF to W-band: the lowest noise figures at the highest gains and very high power at the highest efficiencies. These performance improvements enable the development of major advances in systems applications. This presentation compares PHEMTs to MESFETs to show how each works and points out the advantages of using PHEMTs for systems applications.
Keywords :
Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Lattices; MESFETs; Noise figure; PHEMTs; Scattering;
Conference_Titel :
Sarnoff Symposium, 1995., IEEE Princeton Section
Conference_Location :
Princeton, NJ, USA
DOI :
10.1109/SARNOF.1995.636675
