• DocumentCode
    2400349
  • Title

    A MESFET capacitance model for low-drain voltage operation

  • Author

    Lan, Y.E. ; Wei, C.J. ; Hwang, J. C M

  • fYear
    1995
  • fDate
    28-28 April 1995
  • Abstract
    A new capacitance model for GaAs MESFETs suitable for bwdrain voltage operation is presented. The model includes, in addition to gate-bias dependence, drain-bias dependence of gate-source and gate-drain capacitances. The modeled capacitance values compare well with that extracted from measured S-parameters. The model bas been incorporated in a harmonic-balance commercial simulator, and the simulated MESFET power performance is in good agreement with measured data.
  • Keywords
    Capacitance measurement; Data mining; Diodes; Gallium arsenide; Linearity; MESFETs; Power measurement; Power system modeling; Scattering parameters; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sarnoff Symposium, 1995., IEEE Princeton Section
  • Conference_Location
    Princeton, NJ, USA
  • Type

    conf

  • DOI
    10.1109/SARNOF.1995.636684
  • Filename
    636684
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2400349