Arrays of III-V semiconductor Geiger-mode avalanche photodiodes

Author

Mclntosh, K.A. ; Donnelly, J.P. ; Oakley, D.C. ; Napoleone, A. ; Calawa, S.D. ; Mahoney, L.J. ; Molvar, K.M. ; Mahan, J. ; Molnar, R.J. ; Duerr, E.K. ; Turner, G.W. ; Manfra, M.J. ; Aull, B.F.

Author_Institution

Lincoln Lab., Massachusetts Inst. of Technol., Lexington, MA, USA

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

686

Abstract

In this paper, InGaAsP/InP APDs is designed for detection of near infrared (1-1.5 μm wavelength) light and GaN APDs designed for detection of ultraviolet (<365 nm wavelength) light. This paper will also describe ladar measurements which use arrays of G-M APDs matched with timing circuits to produce 3D images with near-infrared photons.

Keywords

III-V semiconductors; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; infrared detectors; optical arrays; optical design techniques; photodetectors; 1 to 1.5 micron; 3D image; APD arrays; APD design; GaN; GaN APD; Geiger-mode avalanche photodiode; III-V semiconductor; InGaAsP-InP; ladar measurement; near infrared detection; near-infrared photon; timing circuit; ultraviolet detection; Avalanche photodiodes; Circuits; Detectors; Gallium nitride; III-V semiconductor materials; Laboratories; Laser radar; Optical arrays; Timing; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1252986

Filename

1252986