Wavelength shift and strain in quantum well structure by MOCVD selective area growth

Author

Ru, G. ; Yu, X. ; Sun, Y. ; Chen, Z. ; Choa, F.S.

Author_Institution

Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

702

Abstract

In this paper bulk InGaAs, InGaAsP, and multiquantum well (MQW) materials have been separately grown by MOCVD with series of SiO₂ oxide patterns. The material composition was identified by photoluminescence (PL) measurement. The compressive strain in SAG region was calculated and could be compensated during growth by introducing tensile strain. In a MQW structure, the well thickness enhancement due to oxide pattern has been measured; the wavelength shift from both material composition change and well thickness enhancement has been identified individually. This work can help to precisely predict wavelength shift in any part of the SAG region and to obtain high quality crystal growth in SAG region.

Keywords

III-V semiconductors; MOCVD; crystal growth; gallium arsenide; gallium compounds; indium compounds; optical materials; photoluminescence; semiconductor quantum wells; silicon compounds; InGaAs; InGaAsP; MOCVD; MQW; SiO₂; SiO₂ oxide pattern; and multiquantum well material; compressive strain; crystal growth; material composition; photoluminescence; quantum well structure; selective area growth; tensile strain; wavelength shift; well thickness enhancement; Capacitive sensors; Composite materials; Crystalline materials; Indium gallium arsenide; MOCVD; Photoluminescence; Quantum well devices; Tensile strain; Thickness measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1252994

Filename

1252994