Wavelength shift and strain in quantum well structure by MOCVD selective area growth

In this paper bulk InGaAs, InGaAsP, and multiquantum well (MQW) materials have been separately grown by MOCVD with series of SiO₂ oxide patterns. The material composition was identified by photoluminescence (PL) measurement. The compressive strain in SAG region was calculated and could be compensated during growth by introducing tensile strain. In a MQW structure, the well thickness enhancement due to oxide pattern has been measured; the wavelength shift from both material composition change and well thickness enhancement has been identified individually. This work can help to precisely predict wavelength shift in any part of the SAG region and to obtain high quality crystal growth in SAG region.