DocumentCode :
2400949
Title :
Low threshold current strained lnAIGaAs/ AIGaAs quantum well lasers grown by metalorganic vapour phase epitaxy
Author :
Vermeire, G. ; Vermaerke, F. ; Van Daele, Peter ; Demeester, Piet
fYear :
1994
fDate :
28 Aug-2 Sep 1994
Firstpage :
397
Lastpage :
397
Keywords :
Diode lasers; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Laser excitation; Pump lasers; Quantum well lasers; Semiconductor lasers; Solid lasers; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 1994 Conference on
Print_ISBN :
0-7803-1789-0
Type :
conf
DOI :
10.1109/CLEOE.1994.636728
Filename :
636728
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2400949
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