Title :
Novel in-line inspection method for non-visual defects and charging
Author :
Höppner, K. ; Manuwald, R. ; Fahr, T. ; Zschech, E. ; Tamayo, N. ; Hickson, J. ; Adrian, B. ; Newcomb, R.
Author_Institution :
AMD Fab36 LLC & Co. KG, Dresden, Germany
Abstract :
Surface potential difference (SPD) measurements have shown to be effective in in-line characterizing charging non-uniformity and non-visual residues for both process and tool development but also in in-line characterizing properties of ultra thin transistor work function layers.
Keywords :
CMOS integrated circuits; inspection; integrated circuit measurement; semiconductor industry; transistors; in-line inspection method; next-generation CMOS technology; nonvisual defect; semiconductor industry; surface potential difference measurement; ultra thin transistor; Capacitance; Chemical technology; Inspection; Monitoring; Pollution measurement; Probes; Surface charging; Surface contamination; Surface topography; Testing;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2009. ASMC '09. IEEE/SEMI
Conference_Location :
Berlin
Print_ISBN :
978-1-4244-3614-9
Electronic_ISBN :
1078-8743
DOI :
10.1109/ASMC.2009.5155979
