Title :
High spatial resolution subsurface thermal emission microscopy
Author :
Ippolito, S.B. ; Thorne, S.A. ; Goldberg, B.B. ; Unlu, M.S. ; Leblebici, Yusuf
Author_Institution :
Dept. of Phys. & Electr. & Comput. Eng., Boston Univ., MA, USA
Abstract :
In this paper, we demonstrate the improvement the numerical aperture increasing lens (NAIL) yields in thermal emission microscopy of Si ICs. Current Si IC technology has reached submicron process size scales, well beyond the spatial resolution capability of conventional thermal emission microscopy. Thermal emission microscopy measures the spatial distribution of temperature in a sample. The spatial distribution of temperature within a sample can be calculated, because the optical power emitted by the sample is a function of its local temperature. To evaluate the longitudinal spatial resolution we take successive images at different defocus distances in the longitudinal direction. The FWHM of the signal from the positive defocus represents a significant improvement of the longitudinal spatial resolution over conventional thermal emission microscopy, where the ultimate limit is 18 μm.
Keywords :
elemental semiconductors; image resolution; integrated circuits; light reflection; light refraction; optical focusing; optical microscopy; silicon; 18 micron; Si; Si IC technology; numerical aperture increasing lens; optical power; positive defocus signal; spatial resolution subsurface; successive images; thermal emission microscopy; Artificial intelligence; Heating; Inspection; Microscopy; Nails; Optical refraction; Optical variables control; Spatial resolution; Stimulated emission; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253012
