DocumentCode
2401501
Title
Optical properties of GaAsSb/GaAs quantum wells
Author
Wang, J.-B. ; Vaschenko, G. ; Johnson, S.R. ; Guo, C.Z. ; Menoni, C.S. ; Zhang, Y.-H.
Author_Institution
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
808
Abstract
In this paper, GaAsSb/GaAs quantum wells have been studied by the conventional, time-resolved photoluminescence spectroscopy. A weak type I bandedge alignment for the GaAsSb/GaAs heterostructure has also been confirmed.
Keywords
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; infrared spectroscopy; photoluminescence; semiconductor quantum wells; time resolved spectroscopy; GaAsSb-GaAs; GaAsSb-GaAs heterostructure quantum wells; optical property; time-resolved photoluminescence spectroscopy; weak type I bandedge alignment; Gallium arsenide; Optical pulse generation; Photoluminescence; Photonic band gap; Quantum well lasers; Radiative recombination; Spectroscopy; Strain measurement; Substrates; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253046
Filename
1253046
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