Title :
Occupation of higher conduction and valence subbands by resonant tunneling in GaAs/AIAs superlattices
Author :
Klann, R. ; Grahn, H.T. ; Ploog, K.
fDate :
28 Aug-2 Sep 1994
Keywords :
Charge carrier processes; Computer aided analysis; Gallium arsenide; Optical superlattices; Photonic band gap; Resonance; Resonant tunneling devices; Spectroscopy; Stimulated emission; Voltage;
Conference_Titel :
Lasers and Electro-Optics Europe, 1994 Conference on
Print_ISBN :
0-7803-1789-0
DOI :
10.1109/CLEOE.1994.636774
