DocumentCode :
2401669
Title :
Carrier capture and escape times in In0.35Ga0.65As/GaAs multiple quantum well lasers determined from high-frequency impedance and modulation response measurements
Author :
Esquivias, Ignacio ; Weisser, Stefan ; Tasker, P.J. ; Ralston, J.D. ; Rosenzweig, J. ; Romero, B.
fYear :
1994
fDate :
28 Aug-2 Sep 1994
Firstpage :
417
Lastpage :
418
Keywords :
Charge carrier processes; Electroluminescence; Gallium arsenide; Ohmic contacts; Photonic band gap; Quantum well lasers; Resonance; Superlattices; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Europe, 1994 Conference on
Print_ISBN :
0-7803-1789-0
Type :
conf
DOI :
10.1109/CLEOE.1994.636776
Filename :
636776
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2401669
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