• DocumentCode
    2401859
  • Title

    A 500 V monolithic power MOSFET switching 100 A at greater than 10 MHz

  • Author

    Pike, D.A.

  • Author_Institution
    Adv. Power Technol., Bend, OR, USA
  • fYear
    1989
  • fDate
    13-17 Mar 1989
  • Firstpage
    386
  • Lastpage
    390
  • Abstract
    A family of power transistors consisting of monolithic n-channel power MOSFETs is described. The totally self-aligned Power MOS IV has been used to produce devices that can switch 100 A at >10 MHz while blocking 500 V. With this technology, much larger and more powerful MOSFETs are being produced such as the APT 107 die at 388×588 mil or 228000 mil2, and the APT 108 die at 585×738 mil or 432000 mil2. The characteristics of the APT 108 die are presented
  • Keywords
    insulated gate field effect transistors; power transistors; 10 A; 10 MHz; 500 V; APT 107; APT 108; monolithic power MOSFET; n-channel; power transistors; self-aligned Power MOS IV; switching; Immune system; Impedance; MOSFET circuits; Power MOSFET; Power system reliability; Power transistors; Semiconductor device modeling; Silicon; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applied Power Electronics Conference and Exposition, 1989. APEC' 89. Conference Proceedings 1989., Fourth Annual IEEE
  • Conference_Location
    Baltimore, MD
  • Type

    conf

  • DOI
    10.1109/APEC.1989.36990
  • Filename
    36990
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2401859