Title :
Performance analysis of double gate MOSFETs with different gate dielectric
Author :
Yadav, Vinay Kumar ; Rana, Ashwani K.
Author_Institution :
Dept. of Electron. & Commun. Eng., Nat. Inst. of Technol., Hamirpur, India
Abstract :
Double gate MOSFET is one of the most promising and leading contender for nano regime devices. In this paper we investigate the impact of different gate dielectric on performance of DG-MOSFET. Sentaurus TCAD simulator is used for analysis. It is observed in the results that we can change the threshold voltage by changing the dielectric constant of gate dielectric. The impact of gate dielectric also observed on performance parameters of the DG-MOSFET such as on current, off current, drain induced barrier lowering and sub-threshold slope.
Keywords :
MOSFET; dielectric materials; nanoelectronics; performance evaluation; permittivity; technology CAD (electronics); DG-MOSFET; Sentaurus TCAD simulator; dielectric constant; different gate dielectric; double gate MOSFET; drain induced barrier lowering; nanoregime devices; off current; on current; performance analysis; subthreshold slope; threshold voltage; Dielectric constant; Logic gates; MOSFETs; Metals; Performance evaluation; Threshold voltage; DG-MOSFET; DIBL-drain induced barrier lowering; MOSFET scaling; SS-sub threshold slope;
Conference_Titel :
Signal Processing, Computing and Control (ISPCC), 2012 IEEE International Conference on
Conference_Location :
Waknaghat Solan
Print_ISBN :
978-1-4673-1317-9
DOI :
10.1109/ISPCC.2012.6224344
