Title :
GaN to AlN: materials for deep-UV emitters
Author :
Allerman, A.A. ; Fischer, A.J. ; Crawford, M.H. ; Lee, S.R. ; Bogart, K.H.A. ; Mitchell, C.C. ; Koleske, D.D. ; Follstaedt, D.M. ; Provencio, P.P. ; Missert, N.A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
Optical sources emitting between 280 to 340nm will enable the development of compact chemical and biological sensors. Emitters for these emission wavelengths require AlGaN alloys with Al compositions ranging from around 10% to more than 50%. The growth of high Al containing alloys can be difficult due to parasitic reactions that result in poor Al incorporation efficiency and nonlinear growth rates.
Keywords :
III-V semiconductors; aluminium alloys; aluminium compounds; chemical sensors; gallium alloys; gallium compounds; optical materials; ultraviolet sources; ultraviolet spectra; wide band gap semiconductors; 280 to 340 nm; Al composition; Al incorporation efficiency; AlGaN; AlGaN alloys; AlN; GaN; biological sensors; chemical sensors; deep-UV emitters; emission wavelength; nonlinear growth rate; optical materials; optical sources emitting; parasitic reaction; Aluminum alloys; Aluminum gallium nitride; Biological materials; Biomedical optical imaging; Chemical and biological sensors; Gallium nitride; Nonlinear optics; Optical materials; Optical sensors; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253080
