GaN to AlN: materials for deep-UV emitters

Author

Allerman, A.A. ; Fischer, A.J. ; Crawford, M.H. ; Lee, S.R. ; Bogart, K.H.A. ; Mitchell, C.C. ; Koleske, D.D. ; Follstaedt, D.M. ; Provencio, P.P. ; Missert, N.A.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

2

fYear

2003

fDate

27-28 Oct. 2003

Firstpage

874

Abstract

Optical sources emitting between 280 to 340nm will enable the development of compact chemical and biological sensors. Emitters for these emission wavelengths require AlGaN alloys with Al compositions ranging from around 10% to more than 50%. The growth of high Al containing alloys can be difficult due to parasitic reactions that result in poor Al incorporation efficiency and nonlinear growth rates.

Keywords

III-V semiconductors; aluminium alloys; aluminium compounds; chemical sensors; gallium alloys; gallium compounds; optical materials; ultraviolet sources; ultraviolet spectra; wide band gap semiconductors; 280 to 340 nm; Al composition; Al incorporation efficiency; AlGaN; AlGaN alloys; AlN; GaN; biological sensors; chemical sensors; deep-UV emitters; emission wavelength; nonlinear growth rate; optical materials; optical sources emitting; parasitic reaction; Aluminum alloys; Aluminum gallium nitride; Biological materials; Biomedical optical imaging; Chemical and biological sensors; Gallium nitride; Nonlinear optics; Optical materials; Optical sensors; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7888-1

Type

conf

DOI

10.1109/LEOS.2003.1253080

Filename

1253080