DocumentCode
2402440
Title
Long-wavelength metamorphic InGaAs detectors on GaAs substrates
Author
Adesida, I. ; Jang, J.H. ; Bae, J.W. ; Kim, S. ; Hoke, W.E.
Author_Institution
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
919
Abstract
In this paper we present the properties of metamorphic materials, fabrication process of photodiodes, and device results on long-wavelength InGaAs photodetectors with low leakage current and large bandwidth.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; leakage currents; optical fabrication; photodetectors; GaAs substrates; InGaAs-GaAs; leakage current; long-wavelength metamorphic InGaAs photodetectors; metamorphic materials properties; photodiodes fabrication process; Bandwidth; Buffer layers; Dark current; Detectors; Gallium arsenide; Indium gallium arsenide; Lattices; Photodiodes; Photonic band gap; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253103
Filename
1253103
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