Title :
High-efficiency InP based four-junction solar cells
Author :
Gu, Yuantao ; YAN, JIU DUN ; Raj, Milan ; Choa, F.S.
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
Abstract :
In this paper, we simulated and calculated expected efficiency of proposed four-junction solar cells. The InGaAs, AlAsSb, AlInAs and AlGalnAs four-junction solar cells system has a potential to achieve high efficiencies, and can be manufacturable. We fabricated and tested an AlInGaAs(1.0 eV) solar cell.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; photoconductivity; semiconductor device testing; solar cells; 1.0 eV; AlAsSb; AlGaInAs; AlInAs; InGaAs; InP; InP based four-junction solar cells fabrication; solar cell testing; Doping; Gallium arsenide; Indium phosphide; Lattices; MOCVD; Photoconductivity; Photovoltaic cells; Power generation; Solar power generation; Sun;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253107
