Title :
MOMBE growth of III-V-N-based quantum wells and quantum dots emitting above 1.3 μm
Author :
Suemune, I. ; Uesugi, K. ; Sasikala, G. ; Kurimoto, M. ; Zhou, W. ; Thilakan, P.
Author_Institution :
Res. Inst. for Electron. Sci., Hokkaido Univ., Sapporo, Japan
Abstract :
In this paper, new challenges on the III-V-N based quantum wells (QWs) and quantum dots (QDs) prepared with metalorganic molecular-beam epitaxy (MOMBE) is discussed.
Keywords :
III-V semiconductors; chemical beam epitaxial growth; photoluminescence; semiconductor quantum dots; semiconductor quantum wells; 1.3 micron; III-V-N-based quantum dots; III-V-N-based quantum wells; MOMBE growth; metalorganic molecular-beam epitaxy; Gallium arsenide; Laser stability; Molecular beam epitaxial growth; Optical surface waves; Quantum dot lasers; Quantum dots; Semiconductor lasers; Surface emitting lasers; US Department of Transportation; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253116
