Title :
InAs quantum dots on InP(100) grown by metalorganic vapor-phase epitaxy
Author :
Kawaguchi, Kenichi ; Ekawa, Mitsuru ; Kuramata, Akito ; Akiyama, Tomoyuki ; Ebe, Hiroji ; Sugawara, Mitsuru ; Arakawa, Yasuhiko
Author_Institution :
Fujitsu Ltd., Kanagawa, Japan
Abstract :
In this paper, we found that the V/III ratio changes the PL wavelength of InAs keeping the density of dots high in the MOVPE growth of InAs dots with InGaAsP barriers on InP(100), and fabricated dots with high quality. Also, we showed the dots were able to be stacked and stable for the thermal process that was required for the device fabrication.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; gallium compounds; indium compounds; infrared spectroscopy; optical fabrication; photoluminescence; semiconductor quantum dots; InAs quantum dots; InP; InP-InGaAsP; PL; V-III ratio; device fabrication; metalorganic vapor-phase epitaxy growth; quantum dot density; thermal process; Epitaxial growth; Epitaxial layers; Fabrication; Molecular beam epitaxial growth; Optical devices; Quantum dot lasers; Quantum dots; Semiconductor optical amplifiers; Substrates; US Department of Transportation;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253119
