Title :
Behaviour of n-MISISFET in nano-regime — TCAD simulation
Author :
Chaudhary, T. ; Khanna, Gargi ; Chandel, Rajeevan
Author_Institution :
Electron. & Commun., Eng. Dept., Nat. Inst. of Technol., Hamirpur, India
Abstract :
A novel device n-MISISFET with a `dielectric stack´ instead of the single insulator of n-MOSFET has been described and its characteristics has been obtained in this paper. The desired variation of threshold voltage is obtained with forward and reverse body biasing for the novel n-MISISFET for various substrate doping concentrations. The device is based on the principle of resonant tunneling diode (RTD).
Keywords :
MOSFET; resonant tunnelling diodes; technology CAD (electronics); RTD; TCAD simulation; dielectric stack; forward body biasing; n-MISISFET; nano regime; resonant tunneling diode; reverse body biasing; substrate doping concentration; threshold voltage; Doping; Logic gates; MOSFET circuits; Substrates; Threshold voltage; Transistors; Tunneling; RTD; n-MISISFET; n-MOSFET;
Conference_Titel :
Signal Processing, Computing and Control (ISPCC), 2012 IEEE International Conference on
Conference_Location :
Waknaghat Solan
Print_ISBN :
978-1-4673-1317-9
DOI :
10.1109/ISPCC.2012.6224377
