DocumentCode
2402731
Title
Comparison of quantum dot lasers with and without strain compensation layers
Author
Lever, P. ; Buda, M. ; Tan, H.H. ; Jagadish, C.
Author_Institution
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
951
Abstract
In this paper, comparison of self-assembled quantum dot lasers with and without strain compensation layers is performed. It is found that by introducing a strain compensation layers into the barriers of a multiple stacked dot active region the performance of the quantum dot layer is enhanced and the device with strain compensation show lower threshold currents, higher internal efficiencies and less absorption.
Keywords
quantum dot lasers; self-assembly; multiple stacked dot active region; self-assembled quantum dot lasers; strain compensation layers; threshold currents; Absorption; Capacitive sensors; Electroluminescence; Gallium arsenide; Indium gallium arsenide; Laser theory; MOCVD; Quantum dot lasers; Quantum dots; US Department of Transportation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253120
Filename
1253120
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