DocumentCode
2402950
Title
Origin of the high temperature performance degradation of 1.5 μm lnGaAs(P)/lnP quantum well lasers
Author
Sweeney, Stephen J. ; Thijs, Peter J A
Author_Institution
Adv. Technol. Inst., Surrey Univ., Guildford, UK
Volume
2
fYear
2003
fDate
27-28 Oct. 2003
Firstpage
977
Abstract
High temperature degradation of the efficiency of 1.5 μm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.
Keywords
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; light absorption; quantum well lasers; thermo-optical effects; Auger recombination; InGaAs-InP; InGaAsP-InP; analytical model; high temperature performance degradation; internal absorption; quantum well laser; Absorption; Charge carrier density; Degradation; Indium phosphide; Laser modes; Particle measurements; Quantum well lasers; Radiative recombination; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7888-1
Type
conf
DOI
10.1109/LEOS.2003.1253133
Filename
1253133
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