Title :
Origin of the high temperature performance degradation of 1.5 μm lnGaAs(P)/lnP quantum well lasers
Author :
Sweeney, Stephen J. ; Thijs, Peter J A
Author_Institution :
Adv. Technol. Inst., Surrey Univ., Guildford, UK
Abstract :
High temperature degradation of the efficiency of 1.5 μm InGaAs(P) lasers is shown to be due to strong coupling between Auger recombination and internal absorption. This is explained using a simple analytical model.
Keywords :
Auger effect; III-V semiconductors; electron-hole recombination; gallium arsenide; indium compounds; light absorption; quantum well lasers; thermo-optical effects; Auger recombination; InGaAs-InP; InGaAsP-InP; analytical model; high temperature performance degradation; internal absorption; quantum well laser; Absorption; Charge carrier density; Degradation; Indium phosphide; Laser modes; Particle measurements; Quantum well lasers; Radiative recombination; Temperature dependence; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253133
