Title :
Large multiplication-bandwidth products in APDs with a thin InP multiplication layer
Author :
Yasuoka, Nami ; Kuwatsuka, Haruhiko ; Makiuchi, Masao ; Uchida, Torn ; Yasaki, Atsushi
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
In this paper APD is fabricated with an 80 nm InP multiplication layer. The maximum bandwidth of 21 GHz, the multiplication-bandwidth product of 170 Hz and the intrinsic avalanche build up time of 0.4 ps (390 GHz) were obtained. The results shows that an APD for next generation 40 Gbit/s system can be achieved using a conventional InP multiplication layer.
Keywords :
III-V semiconductors; avalanche photodiodes; indium compounds; optical fabrication; 0.4 ps; 170 GHz; 21 GHz; 390 GHz; 40 Gbit/s; 80 nm; APD; InP; avalanche photodiodes; multiplication-bandwidth product; optical fabrication; thin InP multiplication layer; Absorption; Avalanche photodiodes; Bandwidth; Bridge circuits; Dark current; Indium phosphide; Photoconductivity; Substrates; Voltage; Wavelength measurement;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253144
