Thermal component models for electro thermal analysis of multichip power modules

Author

Rodrìguez, J.J. ; Parrilla, Z. ; Veléz-Reyes, M. ; Hefner, A. ; Berning, D. ; Reichl, J. ; Lai, J.

Author_Institution

Center for Power Electron. Syst., Puerto Rico Univ., Mayaguez, Puerto Rico

Volume

1

fYear

2002

fDate

13-18 Oct. 2002

Firstpage

234

Abstract

Thermal component models are developed for multi-chip of insulated gate bipolar transistor (IGBT) power electronic modules (PEM) and associated high-power converter heat sinks. The models are implemented in SABER and are combined with the electro-thermal IGBT and diode models to simulate the electro-thermal performance of high power converter systems. The thermal component models are parameterized in terms of structural and material parameters so that they can be readily used to develop a library of component models for the various commercially available power modules. The paper presents model development and implementation in SABER, simulation results, and validation using experimental data.

Keywords

circuit simulation; heat sinks; insulated gate bipolar transistors; multichip modules; power convertors; thermal analysis; IGBT power electronic modules; SABER; direct-bonded-copper; electro-thermal IGBT models; electro-thermal diode models; electro-thermal performance simulation; high-power converter heat sinks; insulated gate bipolar transistor; material parameters; multi-chip; structural parameters; thermal component models; Electronic packaging thermal management; Heat sinks; Insulated gate bipolar transistors; Multichip modules; NIST; Power electronics; Power system modeling; Power system reliability; Temperature distribution; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the

Conference_Location

Pittsburgh, PA, USA

ISSN

0197-2618

Print_ISBN

0-7803-7420-7

Type

conf

DOI

10.1109/IAS.2002.1044094

Filename

1044094