DocumentCode :
2403300
Title :
Characterization of three-dimensional GaAs/AlxOy near-infrared photonic crystals fabricated by using an autocloning technique
Author :
Mao, M.-H. ; Yeh, D.-M. ; Liu, P.-W. ; Lin, H.-H. ; Chen, H.-L. ; Pan, C.-T.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
2
fYear :
2003
fDate :
27-28 Oct. 2003
Firstpage :
1024
Abstract :
A series of three-dimensional photonic crystals are fabricated. The existence of photonic bandgap is demonstrated in the near-infrared wavelength range and bandgap position shows red-shift with increasing feature size of photonic crystals.
Keywords :
aluminium compounds; gallium arsenide; optical fabrication; photonic band gap; photonic crystals; red shift; GaAs-AlxOy near-infrared photonic crystal; GaAs-AlO; autocloning technique; photonic bandgap; photonic crystal fabrication; red-shift; Crystalline materials; Dielectric constant; Dielectric materials; Gallium arsenide; Optical propagation; Optical refraction; Periodic structures; Photonic band gap; Photonic crystals; Virtual manufacturing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
ISSN :
1092-8081
Print_ISBN :
0-7803-7888-1
Type :
conf
DOI :
10.1109/LEOS.2003.1253157
Filename :
1253157
Link To Document :
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