Title :
A new open-hole buried heterostructure process for the fabrication of photonic integrated circuits
Author :
Sun, Y. ; Ji, X.M. ; Chen, Z. ; Yan, J.Z. ; Cai, J.X. ; Raj, M. ; Choa, F.-S.
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
Abstract :
We have successfully fabricated several batches of open-hole buried heterostructure (BH) lasers using self-align technique with a hole of about 3 μm opening. This new processing technology have in the active region, a traditional buried heterostructure (BH) with semiinsulating InP which works as a current block material. While in the passive region, the semiinsulating InP is the waveguide cladding material. The proposed method is very important for integrated photonic devices. Using this method we will be able to develop sophisticated photonic circuits with very good performance for future optical networking applications.
Keywords :
III-V semiconductors; indium compounds; integrated optics; laser materials processing; optical design techniques; optical fabrication; optical materials; semiconductor lasers; 3 micron; InP; active region; open-hole buried heterostructure laser; open-hole buried heterostructure process; optical networking application; passive region; photonic integrated circuit fabrication; self-align technique; semiinsulating InP; waveguide cladding material; Etching; Insulation; Optical device fabrication; Optical materials; Optical waveguides; Photonic integrated circuits; Semiconductor lasers; Semiconductor materials; Semiconductor waveguides; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253159
