DocumentCode :
2403353
Title :
A 25 Gb/s 400 fJ/bit silicon traveling-wave modulator
Author :
Ding, Ran ; Baehr-Jones, Tom ; Liu, Yang ; Ayazi, Ali ; Pinguet, Thierry ; Harris, Nick ; Streshinsky, Matt ; Lee, Poshen ; Zhang, Yi ; Lim, Andy Eu-Jin ; Liow, Tsung-Yang ; Teo, Selin Hwee-Gee ; Lo, Guo-Qiang ; Hochberg, Michael
Author_Institution :
Dept. of Electr. Eng., Univ. of Washington, Seattle, WA, USA
fYear :
2012
fDate :
20-23 May 2012
Firstpage :
131
Lastpage :
132
Abstract :
We present a traveling-wave Mach-Zehnder modulator operates at 25 Gb/s with 1 Vpp. The 400 fJ/bit energy consumption is a 10× improvement over the best reported values in silicon Mach-Zehnders, becoming competitive with ring modulators.
Keywords :
elemental semiconductors; energy consumption; optical modulation; silicon; travelling wave tubes; Si; bit rate 25 Gbit/s; energy consumption; ring modulators; silicon traveling-wave Mach-Zehnder modulator; Junctions; Metals; Modulation; Optical waveguides; Optics; Radio frequency; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Interconnects Conference, 2012 IEEE
Conference_Location :
Santa Fe, NM
Print_ISBN :
978-1-4577-1620-1
Type :
conf
DOI :
10.1109/OIC.2012.6224411
Filename :
6224411
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2403353
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