Title :
Behavioral and transistor modeling of multi-phase injection ring oscillator
Author :
Ardalan, S. ; Panwalkar, Shweta ; Ali, Mohamed
Author_Institution :
Center for Analog & Mixed Signal, San Jose State Univ., San Jose, CA, USA
Abstract :
This paper presents a system and transistor level analysis of multi-phase injection locking in ring oscillators. Injection strength defines noise reduction and locking range. Behavioral and transistor models of locking compare the effectiveness of multi-phase and single-phase injection. Noise analysis shows that injection lowers the noise floor.
Keywords :
electron device noise; nonlinear network analysis; oscillators; behavioral modeling; injection strength; locking range; multiphase injection ring oscillator; noise reduction; transistor modeling; Injection-locked oscillators; Noise reduction; Phase noise; Ring oscillators; Transistors;
Conference_Titel :
Electrical and Computer Engineering (CCECE), 2014 IEEE 27th Canadian Conference on
Conference_Location :
Toronto, ON
Print_ISBN :
978-1-4799-3099-9
DOI :
10.1109/CCECE.2014.6901152
