Title :
1.5 μm Zn2Si0.5Ge0.5O4:Er electroluminescent waveguide amplifiers
Author :
Baker, C.C. ; Heikenfeld, J.C. ; Munasinghe, C.D. ; Steckl, A.J. ; Nyein, E.E. ; Hommerich, U.
Author_Institution :
Nanoelectron. Lab., Cincinnati Univ., OH, USA
Abstract :
In this paper, we report on Er-doped ZSG waveguide amplifiers and electroluminescent devices (ELDs). A 3.5 μm wide ZSG:Er optical amplifier with a core thickness of 1.1 μm and a length of 4.7 cm was fabricated. The refractive index variation with wavelength was obtained using a variable wavelength spectroscopic ellipsometer with a 0.27 μm ZSG:Er sample. The results indicate that electroluminescent optical amplifiers in ZSG:Er films are possible.
Keywords :
electroluminescent devices; ellipsometers; erbium; infrared spectra; refractive index measurement; silicon compounds; solid lasers; spectrometers; waveguide lasers; zinc compounds; 1.1 micron; 1.5 micron; 3.5 micron; 4.7 cm; ELDs; ZSG:Er films; Zn2Si0.5Ge0.5O4:Er; electroluminescent devices; electroluminescent waveguide amplifier; optical fiber fabrication; refractive index variation; variable wavelength spectroscopic ellipsometer; Electroluminescent devices; Optical amplifiers; Optical films; Optical refraction; Optical variables control; Optical waveguides; Refractive index; Semiconductor optical amplifiers; Stimulated emission; Zinc;
Conference_Titel :
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7888-1
DOI :
10.1109/LEOS.2003.1253172
