GaAs performance in Si technology: SiGe HBTs for mixed analog-digital applications

Author

Storkl, J.M.C. ; Harame, D.L. ; Meyerson, B.S.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

17

Abstract

Summary form only given. Reviews the short but successful history of SiGe HBTs, from the first functionality demonstration in 1987 to the performance of a 1 GHz, 12-bit DAC in 1993. Availability of 60 GHz Fmax bipolar devices in a fully integrated 0.5/0.25 um BiCMOS process, allows high performance mixed signal applications to be implemented in Si technology, achieving unmatched performance and functionality. The intrinsic performance of SiGe transistors has been extended to 115 GHz fT with an Early voltage of 110 V, demonstrating the potential for microwave analog applications.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC; heterojunction bipolar transistors; mixed analogue-digital integrated circuits; semiconductor materials; 0.25 micron; 0.5 micron; 110 V; 115 GHz; 60 GHz; BiCMOS process; Early voltage; HBTs; SiGe; functionality; intrinsic performance; microwave analog applications; mixed analog-digital applications; Analog-digital conversion; BiCMOS integrated circuits; Gallium arsenide; Germanium silicon alloys; Microwave transistors; Signal processing; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636908

Filename

636908