A V-band AlGaAs/InGaAs heterojunction FET MMIC dielectric resonator oscillator

Author

Funabashi, M. ; Ohata, K. ; Onda, K. ; Hosoya, K. ; Inoue, T. ; Kuzuhara, M. ; Kanckawa, K. ; Kobayashi, Y.

Author_Institution

Adv. Millimeter Wave Technol. Co. Ltd., Shiga, Japan

fYear

1994

fDate

16-19 Oct. 1994

Firstpage

30

Lastpage

33

Abstract

This paper reports a high performance V-band MMIC dielectric resonator oscillator (DRO). The DRO utilizing a 0.15 /spl mu/m gate AlGaAs/InGaAs heterojunction FET has exhibited stabilized oscillation with low phase noise of -88 dBc/Hz at 100 kHz off-carrier and the output power of 3.7 dBm at 55.135 GHz. The oscillation frequency stability of -1.9 ppm//spl deg/C was obtained with a dielectric resonator of +3.3 ppm//spl deg/C temperature coefficient.

Keywords

III-V semiconductors; aluminium compounds; circuit stability; dielectric resonator oscillators; field effect MIMIC; frequency stability; gallium arsenide; indium compounds; millimetre wave oscillators; phase noise; 0.15 micron; 55.135 GHz; AlGaAs-InGaAs; MMIC dielectric resonator oscillator; V-band; heterojunction FET MMIC; oscillation frequency stability; output power; phase noise; stabilized oscillation; Dielectrics; FETs; Field effect MMICs; Frequency; Heterojunctions; Indium gallium arsenide; Oscillators; Phase noise; Power generation; Stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual

Conference_Location

Phildelphia, PA, USA

ISSN

1064-7775

Print_ISBN

0-7803-1975-3

Type

conf

DOI

10.1109/GAAS.1994.636912

Filename

636912