• DocumentCode
    2403751
  • Title

    A Short Term Analogue Memory

  • Author

    Shah, Peter

  • Author_Institution
    Electron. Inst., Tech. Univ. of Denmark, Lyngby, Denmark
  • fYear
    1992
  • fDate
    21-23 Sept. 1992
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    A short term analogue memory is described. It is based on a well-known sample-hold topology in which leakage currents have been minimized partly by circuit design and partly by layout techniques. Measurements on a test chip implemented in a standard 2.4 micron analogue CMOS process show a droop rate of 0.075mV per second with a 1pF hold capacitor. This is equivalent to a retention time of approximately 11/4 minute with 10 bits accuracy, assuming a full scale of +/-3.5V. It is expected that this can be improved by more than an order of magnitude by improving the layout of the hold capacitor. Thus hold times of several hours should be achievable with moderate capacitance values.
  • Keywords
    CMOS analogue integrated circuits; analogue storage; capacitors; leakage currents; sample and hold circuits; analogue CMOS process; capacitance 1 pF; circuit design; hold capacitor; layout techniques; leakage currents; sample-hold topology; short term analogue memory; voltage 0.075 mV; word length 10 bit; Buildings; Capacitors; Circuit synthesis; Circuit topology; Diodes; Leakage current; Semiconductor device measurement; Signal processing algorithms; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1992. ESSCIRC '92. Eighteenth European
  • Conference_Location
    Copenhagen
  • Print_ISBN
    87-984232-0-7
  • Type

    conf

  • DOI
    10.1109/ESSCIRC.1992.5468400
  • Filename
    5468400