Title :
An ultra low power AlGaAs/InGaAs HJFET SCFL circuit for 10 Gbps applications with 1.3 V supply voltage
Author :
Fujii, M. ; Maeda, T. ; Ohno, Y. ; Tokushima, M. ; Ishikawa, M. ; Fukaishi, M. ; Hida, H.
Author_Institution :
Microelectron. Res. Lab., NEC Corp., Ibaraki, Japan
Abstract :
SCFL D-FFs with supply voltage as low as 1.3 V are designed and fabricated. The supply voltage is decreased by optimizing the logic swing and the voltage shift in the source followers. The D-FFs, using 0.25 /spl mu/m AlGaAs/InGaAs HJFETs, operate at up to 10 Gbps, with power consumption as low as 19 mW.
Keywords :
III-V semiconductors; JFET integrated circuits; aluminium compounds; field effect logic circuits; flip-flops; gallium arsenide; indium compounds; 0.25 micron; 1.3 V; 10 Gbit/s; 19 mW; AlGaAs-InGaAs; D-FFs; logic swing; source followers; supply voltage; ultra low power AlGaAs/InGaAs HJFET SCFL circuit; voltage shift; Capacitance; Delay effects; Energy consumption; FETs; Gallium arsenide; Indium gallium arsenide; Logic; Switches; Switching circuits; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636917
