DocumentCode :
2403761
Title :
GTEM fields FDTD modeling
Author :
Harrington, Timothy E.
Author_Institution :
EMC Test Syst., Austin, TX, USA
fYear :
1997
fDate :
18-22 Aug 1997
Firstpage :
614
Lastpage :
619
Abstract :
A three dimensional finite-difference time-domain (FDTD) representation of three different size GTEM cells is described. Results are shown for a Liao absorbing boundary condition in place of the backwall and absorber, which shows the behavior of an ideal, reflection-free GTEM. The effects of backwall and termination reflections are discussed. Very good agreement is shown between measured and computed electric field frequency response and transverse plane field uniformity. Several conclusions regarding GTEM field behavior are discussed
Keywords :
electric fields; electromagnetic field theory; electromagnetic wave reflection; finite difference time-domain analysis; frequency response; FDTD modeling; GTEM cells; GTEM fields; Liao absorbing boundary condition; backwall reflection; computed electric field frequency response; gigahertz transverse electromagnetic cell; reflection-free GTEM; termination reflection; three dimensional finite-difference time-domain; transverse plane field uniformity; Boundary conditions; Conductors; Dielectric losses; Finite difference methods; Frequency; Geometry; Reflection; Resistors; TEM cells; Time domain analysis;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electromagnetic Compatibility, 1997. IEEE 1997 International Symposium on
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-4140-6
Type :
conf
DOI :
10.1109/ISEMC.1997.667752
Filename :
667752
Link To Document :
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