DocumentCode :
2403781
Title :
0.9 V DSP blocks: a 15 ns 4 K SRAM and a 45 ns 16-bit multiply/accumulator
Author :
Hallmark, J. ; Shurboff, C. ; Ooms, B. ; Lucero, R. ; Abrokwah, J. ; Jenn-Hwa Huang
Author_Institution :
Pheonix Corp. Res. Lab., Motorola Inc., Tempe, AZ, USA
fYear :
1994
fDate :
16-19 Oct. 1994
Firstpage :
55
Lastpage :
58
Abstract :
4 K SRAM and 16 bit multiply/accumulate DSP blocks have been designed and fabricated in Complementary heterostructure GaAs. Both circuits operate from 1.5 V to below 0.9 V. The SRAM uses 28,272 transistors in an area of 2.44 mm/sup 2/. Cell size is 278 /spl mu/m/sup 2/ at 1.0 /spl mu/m gate length. Measured results show an access delay of 5.3 ns at 1.5 V and 15.0 ns at 0.9 V. At 0.9 V, total power is 0.36 mW. The CGaAs multiplier uses a 16-bit modified Booth architecture with a 3-way 40-bit accumulator. The multiplier uses 11,200 transistors in an area of 1.23 mm/sup 2/. Measured delay is 19.0 ns at 1.5 V and 44.7 ns at 0.9 V. At 0.9 V, total current is less than 0.4 mA.
Keywords :
III-V semiconductors; SRAM chips; digital signal processing chips; gallium arsenide; multiplying circuits; 0.36 mW; 0.4 mA; 0.9 V; 15 ns; 16 bit; 4 Kbit; 45 ns; Booth architecture; DSP blocks; GaAs; SRAM; access delay; accumulator; complementary heterostructure GaAs; low power electronics; multiplier; Circuits; Decoding; Delay; Digital signal processing; Gallium arsenide; Implants; Logic design; Low voltage; Power amplifiers; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-1975-3
Type :
conf
DOI :
10.1109/GAAS.1994.636918
Filename :
636918
Link To Document :
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