• DocumentCode
    2403795
  • Title

    Title: Through Silicon Via (TSV) technology creates electro-optical interfaces

  • Author

    Marcoux, Phil

  • Author_Institution
    ALLVIA, Inc
  • fYear
    2012
  • fDate
    20-23 May 2012
  • Firstpage
    82
  • Lastpage
    83
  • Abstract
    Through Silicon Via (TSV) technology is emerging as an essential method for stacking and interconnecting semiconductor chips. Much has been reported about the interconnecting and stacking of devices, such as, memory-on-memory and memory-on-logic devices. TSV fabrication is a micro-machining process for silicon. As such it can also be utilized to etch and form structures other than vias. One such structure is an electro-optical interposer using TSVs and fiberoptic channels. The performance of this structure has been tested to over 10 Gb/sec.
  • Keywords
    electro-optical devices; micromachining; silicon; vias; Si; TSV; bit rate 10 Gbit/s; electrooptical interposer; fiberoptic channels; micromachining; through silicon via technology; Mirrors; Optical fiber devices; Optical fibers; Receivers; Silicon; Through-silicon vias; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Interconnects Conference, 2012 IEEE
  • Conference_Location
    Santa Fe, NM
  • Print_ISBN
    978-1-4577-1620-1
  • Type

    conf

  • DOI
    10.1109/OIC.2012.6224436
  • Filename
    6224436