DocumentCode
2403795
Title
Title: Through Silicon Via (TSV) technology creates electro-optical interfaces
Author
Marcoux, Phil
Author_Institution
ALLVIA, Inc
fYear
2012
fDate
20-23 May 2012
Firstpage
82
Lastpage
83
Abstract
Through Silicon Via (TSV) technology is emerging as an essential method for stacking and interconnecting semiconductor chips. Much has been reported about the interconnecting and stacking of devices, such as, memory-on-memory and memory-on-logic devices. TSV fabrication is a micro-machining process for silicon. As such it can also be utilized to etch and form structures other than vias. One such structure is an electro-optical interposer using TSVs and fiberoptic channels. The performance of this structure has been tested to over 10 Gb/sec.
Keywords
electro-optical devices; micromachining; silicon; vias; Si; TSV; bit rate 10 Gbit/s; electrooptical interposer; fiberoptic channels; micromachining; through silicon via technology; Mirrors; Optical fiber devices; Optical fibers; Receivers; Silicon; Through-silicon vias; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Interconnects Conference, 2012 IEEE
Conference_Location
Santa Fe, NM
Print_ISBN
978-1-4577-1620-1
Type
conf
DOI
10.1109/OIC.2012.6224436
Filename
6224436
Link To Document