DocumentCode
2403827
Title
Performance comparison of conventional two-level PWM-VSI and four-level flying capacitor PWM-VSI
Author
Petzoldt, Juergen ; Delfo, Sobhi ; Jacobs, Heiner ; Reimann, Tobias
Author_Institution
Dept. of Power Electron., Technische Univ. Ilmenau, Germany
Volume
1
fYear
2002
fDate
13-18 Oct. 2002
Firstpage
515
Abstract
This paper presents a comparison of medium voltage converters with conventional two-level topology using 3.3 kV-IGBTs and a multi-level topology using low-cost, high-rugged 1.2 kV-IGBTs and diodes.
Keywords
PWM invertors; insulated gate bipolar transistors; power semiconductor diodes; 1.2 kV; 3.3 kV; IGBT; diodes; four-level flying capacitor PWM-VSI; low-cost high rugged IGBT; medium voltage converters; multi-level topology; two-level PWM-VSI; two-level topology; voltage source inverters; Capacitors; Circuit topology; Diodes; Filters; Frequency conversion; Insulated gate bipolar transistors; Medium voltage; Multichip modules; Pulse width modulation; Pulse width modulation converters;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 2002. 37th IAS Annual Meeting. Conference Record of the
Conference_Location
Pittsburgh, PA, USA
ISSN
0197-2618
Print_ISBN
0-7803-7420-7
Type
conf
DOI
10.1109/IAS.2002.1044134
Filename
1044134
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