DocumentCode
2403836
Title
Table of contents
Author
Battaglia, Brian ; Rice, D. ; Phuong Le ; Gogoi, B. ; Hoshizaki, G. ; Purchine, M. ; Davies, R. ; Wright, Wendy ; Lutz, D. ; Gao, Ming-Liang ; Moline, David ; Elliot, Alan ; Son Tran ; Neeley, R.
Author_Institution
HVVi Semicond., Inc., Phoenix, AZ, USA
fYear
2008
fDate
27-28 Oct. 2008
Abstract
The silicon vertical MOSFET RF power amplifier described in this paper is the industry??s first to utilize high voltage vertical technology. Operating under pulse conditions of 200 ??sec pulse width and 10% duty cycle it delivers more than 100 W of peak power. Operating in class AB with only 50 mA of bias current the device achieves more than 20 dB of gain and 47% power added efficiency at P1dB compression across 200 MHz of bandwidth at L-Band from 1.2 GHz to 1.4 GHz. The DC characteristics include a BVdss of 115 volts enabling high voltage operation with a 48 V power supply.
Keywords
MOSFET; elemental semiconductors; power amplifiers; radar applications; radiofrequency amplifiers; silicon; RF power amplifier; Si; bandwidth 200 MHz; current 50 mA; frequency 1.2 GHz to 1.4 GHz; high voltage vertical MOSFET; high voltage vertical technology; power 100 W; radar application; silicon MOSFET; voltage 48 V;
fLanguage
English
Publisher
ieee
Conference_Titel
Wireless Technology, 2008. EuWiT 2008. European Conference on
Conference_Location
Amsterdam
Print_ISBN
978-2-87487-008-8
Type
conf
Filename
4753766
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