Title :
A variable-voltage bidirectional I/O pad for digital GaAs applications
Author :
Sherhart, P.J. ; Upton, M.D. ; Lomax, R.J. ; Brown, R.B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A bidirectional I/O pad for digital GaAs applications has been designed, fabricated, and tested using Vitesse Semiconductor process technology. The I/O pad is designed to operate at frequencies up to 500 MHz and at GTL, ECL, or Rambus voltage levels. The I/O pads can be calibrated to these voltage levels either manually using external signals or internally using on-chip digital calibration logic.
Keywords :
calibration; digital integrated circuits; gallium arsenide; 500 MHz; ECL voltage levels; GTL voltage levels; GaAs; Rambus voltage levels; Vitesse Semiconductor process technology; digital GaAs applications; onchip digital calibration logic; variable-voltage bidirectional I/O pad; Atherosclerosis; Automatic logic units; Bonding; Calibration; Counting circuits; Driver circuits; Frequency; Gallium arsenide; Low voltage; Resistors;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location :
Phildelphia, PA, USA
Print_ISBN :
0-7803-1975-3
DOI :
10.1109/GAAS.1994.636923
