DocumentCode
2403869
Title
A variable-voltage bidirectional I/O pad for digital GaAs applications
Author
Sherhart, P.J. ; Upton, M.D. ; Lomax, R.J. ; Brown, R.B.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fYear
1994
fDate
16-19 Oct. 1994
Firstpage
67
Lastpage
70
Abstract
A bidirectional I/O pad for digital GaAs applications has been designed, fabricated, and tested using Vitesse Semiconductor process technology. The I/O pad is designed to operate at frequencies up to 500 MHz and at GTL, ECL, or Rambus voltage levels. The I/O pads can be calibrated to these voltage levels either manually using external signals or internally using on-chip digital calibration logic.
Keywords
calibration; digital integrated circuits; gallium arsenide; 500 MHz; ECL voltage levels; GTL voltage levels; GaAs; Rambus voltage levels; Vitesse Semiconductor process technology; digital GaAs applications; onchip digital calibration logic; variable-voltage bidirectional I/O pad; Atherosclerosis; Automatic logic units; Bonding; Calibration; Counting circuits; Driver circuits; Frequency; Gallium arsenide; Low voltage; Resistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1994. Technical Digest 1994., 16th Annual
Conference_Location
Phildelphia, PA, USA
ISSN
1064-7775
Print_ISBN
0-7803-1975-3
Type
conf
DOI
10.1109/GAAS.1994.636923
Filename
636923
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